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  rev. c information furnished by analog devices is believed to be accurate and reliable. however, no responsibility is assumed by analog devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. one technology way, p.o. box 9106, norwood, ma 02062-9106, u.s.a. tel: 781/329-4700 www.analog.com fax: 781/326-8703 ? 2003 analog devices, inc. all rights reserved. adr291/adr292 low noise micropower 2.5 v and 4.096 v precision voltage references features supply range 2.8 v to 15 v, adr291 4.4 v to 15 v, adr292 supply current 12 a max low-noise 8 v and 12 v p-p (0.1 hz to 10 hz) high output current 5 ma temperature range 40 c to 125 c pin compatible with ref02/ref19x applications portable instrumentation precision reference for 3 v and 5 v systems a/d and d/a converter reference solar-powered applications loop-current-powered instruments pin configurations 8-lead soic (r-8) 1 2 3 4 8 7 6 5 v out v in gnd nc nc nc nc nc adr29x top view (not to scale) nc = no connect 8-lead tssop (ru-8) 1 2 3 4 8 7 6 5 v out v in gnd nc nc nc nc nc adr29x top view (not to scale) nc = no connect adr29x product part number output voltage (v) initial accuracy (%) temperature coefficient (ppm/ c) max adr291 2.500 0.08, 0.12, 0.24 8, 15, 25 adr292 4.096 0.07, 0.10, 0.15 8, 15, 25 adr293 5.000 (see adr293 data sheet) general description the adr291 and adr292 are low noise, micro-power precision voltage references that use an xfet ? reference circuit. the new xfet architecture offers significant performance improvements over traditional band gap and buried zener based references. improvements include one quarter the voltage noise output of band gap references operating at the same current, very low and ultralinear temperature drift, low thermal hysteresis, and excellent long-term stability. the adr29x family are series voltage references providing stable and accurate output voltages from supplies as low as 2.8 v for the adr291. output voltage options are 2.5 v and 4.096 v for the adr291 and adr292, respectively. quiescent current is only 12 a, making these devices ideal for battery-powered instrumen- tation. three electrical grades are available offering initial output accuracies of 2 mv, 3 mv, and 6 mv max for the adr291, and 3 mv, 4 mv, and 6 mv max for the adr292. temperature coefficients for the three grades are 8 ppm/ c, 15 ppm/ c, and 25 ppm/ c max, respectively. line regulation and load regulation are typically 30 ppm/v and 30 ppm/ma, main- taining the reference? overall high performance. for a device with 5.0 v output, refer to the adr293 data sheet. the adr291 and adr292 references are specified over the ex- tended industrial temperature range of ?0 c to +125 c. devices are available in the 8-lead soic and 8-lead tssop packages.
rev. c ? adr291/adr292 adr291?pecifications electrical specifications parameter symbol conditions min typ max unit e grade output voltage v o i out = 0 ma 2.498 2.500 2.502 v initial accuracy v oerr ? +2 mv ?.08 +0.08 % f grade output voltage v o i out = 0 ma 2.497 2.500 2.503 v initial accuracy v oerr ? +3 mv ?.12 +0.12 % g grade output voltage v o i out = 0 ma 2.494 2.500 2.506 v initial accuracy v oerr ? +6 mv ?.24 +0.24 % line regulation e/f grades ? v o / ? v in 3.0 v to 15 v, i out = 0 ma 30 100 ppm/v g grade 40 125 ppm/v load regulation e/f grades ? v o / ? i load v s = 5.0 v, 0 ma to 5 ma 30 100 ppm/ma g grade 40 125 ppm/ma long-term stability ? v o a fter 1000 hrs of operation @ 125 c50 ppm noise voltage e n 0.1 hz to 10 hz 8 v p-p wideband noise density e n @ 1 khz 480 nv/ hz electrical specifications parameter symbol conditions min typ max unit temperature coefficient e grade tcv o i out = 0 ma 3 8 ppm/ c f grade 515 ppm/ c g grade 10 25 ppm/ c line regulation e/f grades ? v o / ? v in 3.0 v to 15 v, i out = 0 ma 35 125 ppm/v g grade 50 150 ppm/v load regulation e/f grades ? v o / ? i load v s = 5.0 v, 0 ma to 5 ma 20 125 ppm/ma g grade 30 150 ppm/ma electrical specifications parameter symbol conditions min typ max unit temperature coefficient e grade tcv o i out = 0 ma 3 10 ppm/ c f grade 520 ppm/ c g grade 10 30 ppm/ c line regulation e/f grades ? v o / ? v in 3.0 v to 15 v, i out = 0 ma 40 200 ppm/v g grade 70 250 ppm/v load regulation e/f grades ? v o / ? i load v s = 5.0 v, 0 ma to 5 ma 20 200 ppm/ma g grade 30 300 ppm/ma supply current i s t a = 25 c912 a ?0 c t a + 125 c1215 a thermal hysteresis v o?ys soic-8, tssop-8 50 ppm specifications subject to change without notice. (v s = 3.0 v to 15 v, t a = ?0  c t a +125  c, unless otherwise noted.) (v s = 3.0 v to 15 v, t a = ?5  c t a +85  c, unless otherwise noted.) (v s = 3.0 v to 15 v, t a = 25  c, unless otherwise noted.)
rev. c adr291/adr292 ? adr292?pecifications electrical specifications parameter symbol conditions min typ max unit e grade output voltage v o i out = 0 ma 4.093 4.096 4.099 v initial accuracy v oerr ? +3 mv ?.07 +0.07 % f grade output voltage v o i out = 0 ma 4.092 4.096 4.1 v initial accuracy v oerr ? +4 mv ?.10 +0.10 % g grade output voltage v o i out = 0 ma 4.090 4.096 4.102 v initial accuracy v oerr ? +6 mv ?.15 +0.15 % line regulation e/f grades ? v o / ? v in 4.5 v to 15 v, i out = 0 ma 30 100 ppm/v g grade 40 125 ppm/v load regulation e/f grades ? v o / ? i load v s = 5.0 v, 0 ma to 5 ma 30 100 ppm/ma g grade 40 125 ppm/ma long-term stability ? v o after 1000 hrs of operation @ 125 c50 ppm noise voltage e n 0.1 hz to 10 hz 12 v p-p wideband noise density e n @ 1 khz 640 nv/ hz electrical specifications parameter symbol conditions min typ max unit temperature coefficient e grade tcv o i out = 0 ma 3 8 ppm/ c f grade 515 ppm/ c g grade 10 25 ppm/ c line regulation e/f grades ? v o / ? v in 4.5 v to 15 v, i out = 0 ma 35 125 ppm/v g grade 50 150 ppm/v load regulation e/f grades ? v o / ? i load v s = 5.0 v, 0 ma to 5 ma 20 125 ppm/ma g grade 30 150 ppm/ma electrical specifications parameter symbol conditions min typ max unit temperature coefficient e grade tcv o i out = 0 ma 3 10 ppm/ c f grade 520 ppm/ c g grade 10 30 ppm/ c line regulation e/f grades ? v o / ? v in 4.5 v to 15 v, i out = 0 ma 40 200 ppm/v g grade 70 250 ppm/v load regulation e/f grades ? v o / ? i load v s = 5.0 v, 0 ma to 5 ma 20 200 ppm/ma g grade 30 300 ppm/ma supply current i s t a = 25 c1015 a ?0 c t a + 125 c1218 a thermal hysteresis v o?ys soic-8, tssop-8 50 ppm specifications subject to change without notice. (v s = 5 v to 15 v, t a = 25  c, unless otherwise noted.) (v s = 5 v to 15 v, t a = ?0  c t a +125  c, unless otherwise noted.) (v s = 5 v to 15 v, t a = ?5  c t a +85  c, unless otherwise noted.)
rev. c e4e adr291/adr292 absolute maximum ratings supply voltage .................................................................. 18 v output short-circuit d uration to gnd .................... indefinite storage temperature range so, ru package ......................................  65 c to  150 c operating temperature range adr291/adr292 ...................................  40 c to  125 c junction temperature range r, ru package ........................................  65 c to  125 c lead temperature (soldering, 60 sec) ............................ 300 c notes 1. stresses above those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only; functional operation at or above this specification is not implied. exposure to the above maximum rating conditions for extended periods may affect device reliability. 2. remove power before inserting or removing units from their sockets. package type  ja *  jc unit 8-lead soic (r) 158 43 c/w 8-lead tssop (ru) 240 43 c/w *  ja is specified for worst-case conditions, i.e.,  ja is specified for device in socket testing. in practice,  ja is specified for a device soldered in the circuit board. caution esd (electrostatic discharge) sensitive device. electrostatic charges as high as 4000 v readily accumulate on the human body and test equipment and can discharge without detection. although the adr291/adr292 features proprietary esd protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. therefore, proper esd precautions are recommended to avoid performance degradation or loss of functionality. ordering guide temperature number of output initial coefficient package package parts per model voltage accuracy (%) max (ppm/  c) description option package adr291er 2.50 0.08 8 soic r-8 98 adr291er-reel7 2.50 0.08 8 soic r-8 1000 adr291fr 2.50 0.12 15 soic r-8 98 adr291fr-reel7 2.50 0.12 15 soic r-8 1000 adr291fr-reel 2.50 0.12 15 soic r-8 2500 adr291gr 2.50 0.24 25 soic r-8 98 adr291gr-reel7 2.50 0.24 25 soic r-8 1000 adr291gr-reel 2.50 0.24 25 soic r-8 2500 adr291gru-reel7 2.50 0.24 25 tssop ru-8 1000 adr291gt9 2.50 0.24 25 to-92 t-9 98 adr291gt9-reel 2.50 0.24 25 to-92 t-9 2000 adr292er 4.096 0.07 8 soic r-8 98 adr292er-reel 4.096 0.07 8 soic r-8 2500 adr292fr 4.096 0.10 15 soic r-8 98 adr292fr-reel7 4.096 0.10 15 soic r-8 1000 adr292fr-reel 4.096 0.10 15 soic r-8 2500 adr292gr 4.096 0.15 25 soic r-8 98 adr292gr-reel7 4.096 0.15 25 soic r-8 1000 ADR292GRU 4.096 0.24 25 tssop ru-8 98 ADR292GRU-reel7 4.096 0.15 25 tssop ru-8 1000 see adr293 data sheet for ordering guide. other xfet products part nominal output package number voltage (v) type adr420 2.048 8-lead msop/soic adr421 2.50 8-lead msop/soic adr423 3.0 8-lead msop/soic adr425 5.0 8-lead msop/soic
rev. c adr291/adr292 e5e parameter definitions line regulation the change in output voltage due to a specified change in input voltage. it includes the effects of self-heating. line regulation is expressed in either percent-per-volt, parts-per-million-per-volt, or microvolts-per-volt change in input voltage. load regulation the change in output voltage is due to a specified change in load current. it includes the effects of self-heating. load regulation is expressed in either microvolts-per-milliampere, parts-per-million-per-milliampere, or ohms of dc output resistance. long-term stability t ypical shift of output voltage at 25 c on a sample of parts subjected to a test of 1000 hours at 125 c.   vvtvt v ppm vt vt vt oo o oo o = () () = () () () 0o1 01 0 [] 10 6 where: v o (t 0 ) = v o at 25 c at time 0 v o (t 1 ) = v o at 25 c after 1000 hours operation at 125 c temperature coefficient the change of output voltage over the operating temperature change and normalized by the output voltage at 25 c, ex- pressed in ppm/ c. the equation follows: tcv ppm c vt vt vctt o oo o [/] () () ()() ? 21 21 6 25 10 where: v o ( 25 c) = v o at 25 c v o (t 1 ) = v o at temperature 1 v o (t 2 ) = v o at temperature 2 nc = no connect. there are in fact internal connections at nc pins that are re- served for manufacturing purposes. users should not connect anything at nc pins. thermal hysteresis thermal hysteresis is defined as the change of output voltage after the device is cyc led through temperature from +25 c to ?0 c to +85 c and back to +25 c. this is a typical value from a sample of parts put through such a cycle. vvcv v ppm vcv vc o hys o o tc o hys ootc o ? _ () [] () () = = 25 25 25 10 6 where: v o (25 c ) = v o at 25 c v o?c = v o at 25 c after temperature cycle at +25 c to ?0 c to +85 c and back to +25 c
rev. c e6e adr291/adr292etypical performance characteristics temperature e  c 2.506 2.494 e50 125 e25 output voltage e v 025507 5 100 2.504 2.502 2.500 2.498 2.496 v s = 5v 3 typical parts tpc 1. adr291 v out vs. temperature temperature e  c 4.102 4.090 e50 125 e25 output voltage e v 025507 5 100 4.100 4.098 4.096 4.094 4.092 v s = 5v 3 typical parts tpc 2. adr292 v out vs. temperature input voltage e v 14 0 016 2 quiescent current e  a 468101214 12 8 6 4 2 10 t a = +125  c t a = +25  c t a = e40  c tpc 3. adr291 quiescent current vs. input voltage input voltage e v 16 0 016 2 quiescent current e  a 468101214 12 8 6 4 2 10 t a = +125  c t a = +25  c t a = e40  c 14 tpc 4. adr292 quiescent current vs. input voltage temperature e  c 14 12 4 e50 125 e25 supply current e  a 025507 5 100 10 8 6 v s = 5v adr291 adr292 tpc 5. adr291/adr292 supply current vs. temperature temperature e  c 100 80 0 e50 125 e25 line regulation e ppm/v 025507 5 100 60 40 20 adr291: v s = 3.0v to 15v adr292: v s = 4.5v to 15v adr292 adr291 i out = 0ma tpc 6. adr291/adr292 line regulation vs. temperature
rev. c adr291/adr292 e7e temperature e  c 100 80 0 e50 125 e25 line regulation e ppm/v 0255 075 100 60 40 20 adr291: v s = 3.0v to 7.0v adr292: v s = 4.5v to 9.0v adr292 i out = 0ma adr291 tpc 7. adr291/adr292 line regulation vs. temperature load current e ma differential voltage e v 0.7 0 0 5.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.6 0.5 0.4 0.3 0.2 0.1 t a = +25  c t a = e40  c t a = +125  c tpc 8. adr291 minimum input-output voltage differential vs. load current load current e ma 0.7 0 0 5.0 0.5 differential voltage e v 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.6 0.5 0.4 0.3 0.2 0.1 t a = +25  c t a = e40  c t a = +125  c tpc 9. adr292 minimum input-output voltage differential vs. load current temperature e  c 200 160 0 e50 125 e25 load regulation e ppm/ma 0255 075 100 120 80 40 v s = 5v i out = 1ma i out = 5ma tpc 10. adr291 load regulation vs. temperature temperature e  c 200 160 0 e50 125 e25 load regulation e ppm/ma 0255 075 100 120 80 40 v s = 5v i out = 1ma i out = 5ma tpc 11. adr292 load regulation vs. temperature sourcing load current e ma 0 e1250 e2000 0.1 10 1  v out from nominal e  v e1750 e1500 e500 e250 t a = +25  c t a = +125  c t a = e40  c e1000 e750 tpc 12. adr291  v out from nominal vs. load current
rev. c e8e adr291/adr292 sourcing load current e ma 0 e2500 e4000 0.1 10 1  v out from nominal e  v e3500 e3000 e1000 e500 t a = +25  c t a = +125  c t a = e40  c e2000 e1500 tpc 13. adr292  v out from nominal vs. load current frequency e hz 1000 500 0 10 1000 100 voltage noise density e nv/  hz 100 200 800 900 300 400 600 700 adr292 v in = 15v t a = 25  c adr291 tpc 14. voltage noise density vs. frequency frequency e hz 120 60 0 10 1000 100 ripple rejection e db 20 100 80 v s = 5v 40 tpc 15. adr291/adr292 ripple rejection vs. frequency 10 0% 100 90 1s 2  v p-p tpc 16. adr291 0.1 hz to 10 hz noise frequency e hz 50 40 0 0 10k 10 output impedance e  100 1k 30 20 10 v s = 5v i l = 0 ma tpc 17. adr291 output impedance vs. frequency frequency e hz 50 40 0 0 10k 10 output impedance e  100 1k 30 20 10 v s = 5v i l = 0 ma tpc 18. adr292 output impedance vs. frequency
rev. c adr291/adr292 e9e 10 0% 100 90 1ms i l = 5ma 1v off on tpc 19. adr291 load transient 10 0% 100 90 1ms i l = 5ma c l = 1nf 1v off on tpc 20. adr291 load transient 10 0% 100 90 5ms i l = 5ma c l = 100nf 1v off on tpc 21. adr291 load transient 10 0% 100 90 500  s i l = 5ma 1v tpc 22. adr291 turn-on time 10 0% 100 90 10ms i l = 0ma 1v tpc 23. adr291 turn-off time v out deviation e ppm e200 0 frequency 8 6 4 2 10 14 12 16 18 e180 e160 e140 e120 e100 e80 e60 e40 e20 0 20 40 60 80 100 120 140 160 180 200 more temperature +25  c e40  c 85  c +25  c tpc 24. typical hysteresis for the adr291 product
rev. c e10e adr291/adr292 theory of operation the adr29x series of references uses a new reference gen- eration technique known as xfet (extra implanted junction fet). this technique yields a reference with low noise, low supply current, and very low thermal hysteresis. the core of the xfet reference consists of two junction field- effect transistors, one having an extra channel implant to raise its pinch-off voltage. by running the two jfets at the same drain current, the difference in pinch-off voltage can be amplified and used to form a highly stable voltage reference. the intrinsic reference voltage is around 0.5 v with a negative temperature coefficient of about e120 ppm/k. this slope is essentially locked to the dielectric constant of silicon and can be closely compen- sated by adding a correction term generated in the same fashion as the proportional-to-temperature (ptat) term used to com- pensate band gap references. the big advantage over a band gap reference is that the intrinsic temperature coefficient is some 30 times lower (therefore less correction is needed), which results in much lower noise since most of the noise of a band gap refer- ence comes from the temperature compensation circuitry. the simplified schematic below shows the basic topology of the adr29x series. the temperature correction term is provided by a current source with value designed to be proportional to abso- lute temperature. the general equation is vv rr r r ir out p ptat = ++    
+ ()()  12 3 1 3 where  v p is the difference in pinch-off voltage between the two fets, and i ptat is the positive temperature coefficient correc- tion current. the various versions of the adr29x family are created by on-chip adjustment of r1 and r3 to achieve 2.500 v or 4.096 v at the reference output. the process used for the xfet reference also features vertical npn and pnp transistors, the latter of which are used as out- put devices to provide a very low drop-out voltage. v out v in i ptat gnd r1 r2 r3 i 1 i 1 * * extra channel implant v out = r1 + r2 + r3 r1   v p + i ptat  r3  v p figure 1. adr291/adr292 simplified schematic device power dissipation considerations the adr29x family of references is guaranteed to deliver load currents to 5 ma with an input voltage that ranges from 2.7 v to 15 v (minimum supply voltage depends on output voltage option). when these devices are used in applications with large input voltages, care should be exercised to avoid exceeding the p ublished specifications for maximum power dissipation or junc- tio n temperature that could result in premature device fail ure. the following formula should be used to calculate a device? m axi- mum junction temperature or dissipation: p tt d a a = j j e  in this equation, t j and t a are the junction and ambient tem- peratures, respectively, p d is the device power dissipation, and  j a is the device package thermal resistance. basic voltage reference connections references, in general, require a bypass cap acitor connected fro m the v out pin to the gnd pin. the circuit in figure 2 illustrates the basic configuration for the adr29x family of ref- erences. note that the decoupling capacitors are not required for circuit stability. adr29x 1 2 3 4 8 7 6 5 nc nc nc nc output nc 0.1  f 0.1  f 10  f + nc = no connect figure 2. basic voltage reference configuration noise performance the noise generated by the adr29x family of references is typically less than 12 v p-p over the 0.1 hz to 10 hz band. the noise measurement is made with a band-pass filter made of a 2-pole high-pass filter with a corner frequency at 0.1 hz and a 2-pole low-pass filter with a corner frequency at 10 hz. turn-on time upon application of power (cold start), the time required for the o utput voltage to reach its final value within a specified error band is def ined as the turn-on settling time. two components nor- mally associated with this are the time for the active circuits to settle, and the time for the thermal gradients on the chip to sta- b ilize. tpc 22 shows the turn-on settling time for the adr291.
rev. c adr291/adr292 e11e applications section a negative precision reference without precision resistors in many current-output cmos dac applications, where the output signal voltage must be of the same polarity as the reference voltage, it is often necessary to reconfigure a current-switching dac into a voltage-switching dac through the use of a 1.25 v refer- ence, an op amp, and a pair of resistors. using a current-switching dac directly requires an additional operational amplifier at the output to reinvert the signal. a negative voltage reference is then desirable from the point that an additional operational amplifier is not required for either reinversion (current-switch- ing mode) or amplification (voltage-switching mode) of the dac output voltage. in general, any positive voltage reference can be converted into a negative voltage reference through the use of an operational amplifier and a pair of matched resistors in an inverting configuration. the disadvantage to that approach is that the largest single source of error in the circuit is the relative matching of the resistors used. the circuit illustrated in figure 3 avoids the need for tightly matched resistors with the use of an active integrator circuit. in this circuit, the output of the voltage reference provides the input drive for the integrator. to maintain circuit equilib- rium, the integrator adjusts its output to establish the proper relationship between the reference?s v out and gnd. thus, any negative output voltage desired can be chosen by simply substituting for the appropriate reference ic. one caveat with this approach should be mentioned: although rail-to-rail output amplifiers work best in the application, these operational ampli- fiers require a finite amount (mv) of headroom when required to provide any load current. the choice for the circuit?s negative supply should take this issue into account. a1 100  +5v e5v 1k  1  f 100k  v out gnd v in adr29x ev ref a1 = 1/2 op291, 1/2 op295 1  f figure 3. a negative precision voltage reference uses no precision resistors a precision current source many times in low power applications, the need arises for a pre- cision current source that can operate on low supply voltages. as shown in figure 4, any one of the devices in the adr29x family of references can be configured as a precision current source. the circuit configuration illustrated is a floating current source with a grounded load. the reference?s output voltage is bootstrapped across r set, which sets the output current into the load. with this configuration, circuit precision is maintained for load currents in the range from the reference?s supply current, typically 12 a to approximately 5 ma. 1  f v out gnd v in adr29x i out r l i sy adjust r1 p1 r set figure 4. a precision current source high voltage floating current source the circuit of figure 5 can be used to generate a floating cur rent source with minimal self-heating. this particular con- figurat ion can operate on high supply voltages determined by the breakdown voltage of the n-channel jfet. +v s op90 adr29 x v in gnd e231 siliconix 2n3904 2.10k  ev s figure 5. high voltage floating current source
rev. c e12e adr291/adr292 kelvin connections in many portable instrumentation applications, where pc board cost and area go hand-in-hand, circuit interconnects are very often of dimensionally minimum width. these narrow lines can cause large voltage drops if the voltage reference is required to provide load currents to various functions. in fact, a circuit?s inter- connects can exhibit a typical line resistance of 0.45 m /square (1 oz. cu, for example). force and sense connections also referred to as kelvin connections, offer a convenient method of eliminating the effects of voltage drops in circuit wires. load currents flowing through wiring resistance produce an error (v error = r i l ) at the load. however, the kelvin connection of figure 6 overcomes the problem by including the wiring resistance within the forcing loop of the op amp. since the op amp senses the load voltage, op amp loop control forces the output to compensate for the wiring error, and to produce the correct voltage at the load. a1 1  f 100k  v out gnd v in adr29x +v out sense a1 = 1/2 op295 v in r lw r l r lw +v out force figure 6. advantage of kelvin connection low power, low voltage reference for data converters the adr29x family has a number of features that makes it ideally suited for use with a/d and d/a converters. the low supply voltage required makes it possible to use the adr291 with today?s converters that run on 3 v supplies without having to add a higher supply voltage for the reference. the low quies- cent current (12 a max) and low noise, tight temperature coefficient, combined with the high accuracy of the adr29x, make it ideal for low power applications such as hand-held, battery-operated equipment. one such adc for which the adr291 is well suited is the ad7701. figure 7 shows the adr291 used as the reference for this converter. the ad7701 is a 16-bit a/d converter with on-chip digital filtering intended for the measurement of wide dynamic range, low frequency signals such as those repre- senting chemical, physical, or biological processes. it contains a charge balancing (sigma-delta) adc, calibration microcontroller with on-chip static ram, a clock oscillator, and a serial communi- cations port. this entire circuit runs on 5 v supplies. the power dissipation of the ad7701 is typically 25 mw and, when combined with the power dissipation of the adr291 (60 w), the entire circuit still consumes about 25 mw. bp/ up cl re d ss dd d dd sleep de drdy scl cs sd cl clu sc sc dd d ss d redy red rs serl clc serl clc l supply l rud l pu clre res selec dr d u l supply d lplsr d rpe dr drdr s esr cc ccr dr u d ledcd ery crer pu r r c elec c r r p ep rpe
rev. c adr291/adr292 e13e 8-lead standard small outline package [soic] narrow body (r-8) dimensions shown in millimeters and (inches) 0.25 (0.0098) 0.17 (0.0067) 1.27 (0.0500) 0.40 (0.0157) 0.50 (0.0196) 0.25 (0.0099)  45  8  0  1.75 (0.0688) 1.35 (0.0532) seating plane 0.25 (0.0098) 0.10 (0.0040) 85 4 1 5.00 (0.1968) 4.80 (0.1890) 4.00 (0.1574) 3.80 (0.1497) 1.27 (0.0500) bsc 6.20 (0.2440) 5.80 (0.2284) 0.51 (0.0201) 0.31 (0.0122) coplanarity 0.10 controlling dimensions are in millimeters; inch dimensions (in parentheses) are rounded-off millimeter equivalents for reference only and are not appropriate for use in design compliant to jedec standards ms-012aa outline dimensions 8-lead thin shrink small outline package [tssop] (ru-8) dimensions shown in millimeters 8 5 4 1 pin 1 0.65 bsc seating plane 0.15 0.05 0.30 0.19 1.20 max 0.20 0.09 8  0  6.40 bsc 0.75 0.60 0.45 4.50 4.40 4.30 3.10 3.00 2.90 coplanarity 0.10 compliant to jedec standards mo-153aa 3-pin plastic header-style package [to-92] (t-9) dimensions shown in inches and (millimeters) 0.115 (2.92) 0.080 (2.03) 0.115 (2.92) 0.080 (2.03) 0.165 (4.19) 0.125 (3.18) sq 0.019 (0.482) 0.016 (0.407) 0.105 (2.66) 0.095 (2.42) 0.055 (1.40) 0.045 (1.15) seating plane 0.500 (12.70) min 0.205 (5.21) 0.175 (4.45) 0.210 (5.33) 0.170 (4.32) 123 bottom view 0.135 (3.43) min 0.050 (1.27) max controlling dimensions are in inches; millimeters dimensions (in parentheses) are rounded-off equivalents for reference only and are not appropriate for use in design compliant to jedec standards to-226aa
rev. c e14e adr291/adr292 revision history location page 9/03?data sheet changed from rev. b to rev. c. deleted adr290 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . universal changes to specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 changes to ordering guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 updated outline dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
e15e
c00163e0e9/03(c) e16e


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